Junctionless Poly-Si Nanowire FET With Gated Raised S/D
نویسندگان
چکیده
منابع مشابه
Metal-Gated Junctionless Nanowire Transistors
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2016
ISSN: 2168-6734
DOI: 10.1109/jeds.2016.2514478